Influence of nitrogen incorporation in hydrogenated amorphous silicon films prepared by photochemical vapor deposition

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机构：
[1] Hiramatsu, Masato
[2] Kamimura, Takaaki
[3] Nakajima, Mitsuo
[4] Ito, Hiroshi
来源：
Hiramatsu, Masato | 1600年 / 30期
关键词：
Nitrogen - Photoconductivity - Semiconducting Films--Amorphous;
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摘要：
The influence of nitrogen incorporation in a-Si:H films by mercury-photosensitized decomposition of a silane-ammonia gas mixture was investigated. It was found that there are two different film structures of a-Si:H films. In a high nitrogen concentration, nitrogen is one of the elements of the a-SiNx alloy. On the other hand, in a low nitrogen concentration, nitrogen plays the role of a dopant in a-Si:H, and nitrogen-induced localized states are created at around 0.5 eV above the valence band edge.
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