共 50 条
- [11] INDIUM COMPOSITION DEPENDENT THRESHOLD CURRENT-DENSITY IN STRAINED INGAAS/ALGAAS QUANTUM-WELL LASERS JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (12B): : L2098 - L2100
- [12] OPTIMIZATION OF THRESHOLD CURRENT-DENSITY FOR COMPRESSIVE-STRAINED INGAAS/GAAS QUANTUM-WELL LASERS JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (12A): : 5584 - 5585
- [16] Threshold current and its temperature dependence in InGaAsP/InP strained quantum-well lasers under a magnetic field 1995, JJAP, Minato-ku, Japan (34):
- [19] Theoretical comparison of 0.78% tensile strained InGaAs/InAlGaAs and InGaAs/InGaAsP quantum-well lasers emitting at 1.55 μm DESIGN, FABRICATION AND CHARACTERIZATION OF PHOTONIC DEVICES, 1999, 3896 : 741 - 750