Radiation-induced trapped charge in metal-nitride-oxide-semiconductor structure

被引：0
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作者：
Takahashi, Y. [1 ]
Ohnishi, K. [1 ]
Fujimaki, T. [1 ]
Yoshikawa, M. [1 ]
机构：
[1] Nihon Univ, Chiba, Japan
来源：
IEEE Transactions on Nuclear Science | 1999年 / 46卷 / 6 I期
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页码：1578 / 1585
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