Radiation-induced trapped charge in metal-nitride-oxide-semiconductor structure

被引：0

作者：

Takahashi, Y. ^{[1
]}

Ohnishi, K. ^{[1
]}

Fujimaki, T. ^{[1
]}

Yoshikawa, M. ^{[1
]}

机构：

[1] Nihon Univ, Chiba, Japan

来源：

IEEE Transactions on Nuclear Science | 1999年 / 46卷 / 6 I期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：1578 / 1585

共 50 条

[1] Radiation-induced trapped charge in metal-nitride-oxide-semiconductor structure
Takahashi, Y
Ohnishi, K
Fujimaki, T
Yoshikawa, M
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1999, 46 (06) : 1578 - 1585
[2] DEGRADATION EFFECT ON THE TRAPPED CHARGE PROFILE IN A METAL-NITRIDE-OXIDE-SEMICONDUCTOR STRUCTURE INSULATOR
SHIRSHOV, YM
NABOK, AV
UKRAINSKII FIZICHESKII ZHURNAL, 1984, 29 (11): : 1726 - 1730
[3] COMPENSATION OF RADIATION EFFECTS BY CHARGE TRANSPORT IN METAL-NITRIDE-OXIDE-SEMICONDUCTOR STRUCTURES
CRICCHI, JR
BARBE, DF
APPLIED PHYSICS LETTERS, 1971, 19 (03) : 49 - &
[4] USE OF A METAL-NITRIDE-OXIDE-SEMICONDUCTOR AS DETECTOR FOR A RADIATION DOSIMETER
FRAASS, RG
TALLON, RW
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1978, 25 (06) : 1613 - 1618
[5] DEGRADATION PROPERTIES IN METAL-NITRIDE-OXIDE-SEMICONDUCTOR STRUCTURES
SUZUKI, E
HAYASHI, Y
YANAI, H
JOURNAL OF APPLIED PHYSICS, 1981, 52 (10) : 6377 - 6385
[6] CHARGE LOSS IN METAL-NITRIDE-OXIDE-SEMICONDUCTOR (MNOS) DEVICES AT HIGH-TEMPERATURES
DOBBS, CS
BROWN, WD
YEARGAN, JR
SOLID-STATE ELECTRONICS, 1983, 26 (05) : 427 - 432
[7] MODEL OF DEGRADATION MECHANISMS IN METAL-NITRIDE-OXIDE-SEMICONDUCTOR STRUCTURES
SUZUKI, E
HAYASHI, Y
YANAI, H
APPLIED PHYSICS LETTERS, 1979, 35 (10) : 790 - 792
[8] CARRIER CONDUCTION AND TRAPPING IN METAL-NITRIDE-OXIDE-SEMICONDUCTOR STRUCTURES
SUZUKI, E
HAYASHI, Y
JOURNAL OF APPLIED PHYSICS, 1982, 53 (12) : 8880 - 8885
[9] NON-VOLATILE MNOS "(METAL-NITRIDE-OXIDE-SEMICONDUCTOR) MEMORY
ANDREYEVA, AN
ZARKOV, IP
KONSTANTINOVA, PP
DOKLADI NA BOLGARSKATA AKADEMIYA NA NAUKITE, 1978, 31 (06): : 651 - 654
[10] A MECHANISM FOR ENDURANCE FAILURE IN METAL-NITRIDE-OXIDE-SEMICONDUCTOR DEVICE STRUCTURES
PRYOR, RW
JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) : 3702 - 3704

← 1 2 3 4 5 →