Lasing in ZnCdSe/ZnSe single quantum well structures with photopumping

被引：0
|
作者：
Changchun Inst of Physics, Changchun, China [1 ]
机构：
来源：
Guangxue Xuebao | / 10卷 / 1398-1402期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] Red-green-blue photopumped lasing from ZnCdMgSe/ZnCdSe quantum well laser structures grown on InP
    Zeng, L
    Yang, BX
    Cavus, A
    Lin, W
    Luo, YY
    Tamargo, MC
    Guo, Y
    Chen, YC
    APPLIED PHYSICS LETTERS, 1998, 72 (24) : 3136 - 3138
  • [32] Molecular-beam epitaxy growth and nitrogen doping of hexagonal ZnSe and ZnCdSe/ZnSe quantum well structures on hexagonal ZnMgSSe bulk substrates
    Lin, W
    Tamargo, MC
    Wei, HY
    Sarney, W
    Salamanca-Riba, L
    Fitzpatrick, BJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (03): : 1711 - 1715
  • [33] LASING IN A ZNS0.12SE0.88/ZNSE MULTILAYER STRUCTURE WITH PHOTOPUMPING
    SUEMUNE, I
    YAMADA, K
    MASATO, H
    KAN, Y
    YAMANISHI, M
    APPLIED PHYSICS LETTERS, 1989, 54 (11) : 981 - 983
  • [34] Determination of the indices of retraction of molecular-beam-epitaxy-grown ZnSe/ZnCdSe multiple-quantum-well structures
    Peiris, FC
    Bindley, U
    Furdyna, JK
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (04): : 1497 - 1500
  • [35] Molecular beam epitaxy of ZnCdSe/ZnSe strained quantum-well structures on GaAs(111)A substrates and piezoelectric properties
    Matsumura, N
    Shimakawa, H
    Gotou, M
    Saraie, J
    JOURNAL OF CRYSTAL GROWTH, 1998, 184 : 723 - 727
  • [36] Calculation of gain-current characteristics in ZnCdSe-ZnSe quantum well structures including many body effects
    Rees, P
    Logue, FP
    Donegan, JF
    Heffernan, JF
    Jordan, C
    Hegarty, J
    APPLIED PHYSICS LETTERS, 1995, 67 (25) : 3780 - 3782
  • [37] Magneto-Optical Properties of ZnMnSe-ZnSe-ZnCdSe Quantum Structures
    Ito, M.
    Tajima, M.
    Omori, K.
    Muranaka, T.
    Nabetani, Y.
    Kato, T.
    Matsumoto, T.
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2008, 53 (05) : 2972 - 2975
  • [38] CAVITY PARAMETERS OF ZNCDSE/ZNSE SINGLE-QUANTUM-WELL SEPARATE-CONFINEMENT-HETEROSTRUCTURE LASER-DIODES
    TSUJIMURA, A
    YOSHII, S
    HAYASHI, S
    OHKAWA, K
    MITSUYU, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (12A): : L1750 - L1752
  • [39] ZNCDSE/ZNSE QUANTUM-WELL LASER-DIODE ON A (711)A GAAS SUBSTRATE
    OHNO, T
    KAWAGUCHI, Y
    OHKI, A
    MATSUOKA, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1994, 33 (10): : 5766 - 5773
  • [40] Resonant raman scattering spectra in a ZnCdSe/ZnSe structure with a quantum well and open nanowires
    Kaibyshev, VK
    Travnikov, VV
    Davydov, VY
    PHYSICS OF THE SOLID STATE, 2003, 45 (07) : 1374 - 1378
12345