Free-standing submicrometre filament crystals of Si and GexSi1-x

被引：0
|
作者：
Inst of Semiconductor Physics, Kiev, Ukraine [1 ]
机构：
来源：
Microelectron J | / 1卷 / 13-22期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] Free-standing submicrometre filament crystals of Si and GexSi1-x
    Klimovskaya, AI
    MICROELECTRONICS JOURNAL, 1997, 28 (01) : 13 - 22
  • [2] Si/GexSi1-x heterojunction bipolar transistors with the GexSi1-x base formed by Ge ion implantation in Si
    Lombardo, S
    Pinto, A
    Raineri, V
    Ward, P
    LaRosa, G
    Privitera, G
    Campisano, SU
    IEEE ELECTRON DEVICE LETTERS, 1996, 17 (10) : 485 - 487
  • [3] X-RAY STUDY OF FREESTANDING FILAMENT CRYSTALS OF GEXSI1-X SOLID-SOLUTION
    KLIMOVSKAYA, AI
    OSTROVSKII, IP
    BAITSAR, RI
    OSTROVSKAYA, AS
    JOURNAL OF PHYSICS-CONDENSED MATTER, 1995, 7 (07) : 1229 - 1234
  • [4] STUDY OF GEXSI1-X/SI SUPERLATTICES BY ELLIPSOMETRY
    QIN, LH
    ZHENG, YD
    ZHANG, R
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1992, 55 (03): : 297 - 300
  • [5] HETEROEPITAXY OF GEXSI1-X ON POROUS SI SUBSTRATES
    XIE, YH
    BEAN, JC
    JOURNAL OF APPLIED PHYSICS, 1990, 67 (02) : 792 - 795
  • [6] RESONANT TUNNELING OF HOLES IN SI/GEXSI1-X
    FU, Y
    CHEN, Q
    WILLANDER, M
    JOURNAL OF APPLIED PHYSICS, 1991, 70 (12) : 7468 - 7473
  • [7] THERMAL-STABILITY OF SI/GEXSI1-X/SI HETEROSTRUCTURES
    HULL, R
    BEAN, JC
    APPLIED PHYSICS LETTERS, 1989, 55 (18) : 1900 - 1902
  • [8] VELOCITY SATURATION IN THE COLLECTOR OF SI/GEXSI1-X/SI HBTS
    COTTRELL, PE
    YU, ZP
    IEEE ELECTRON DEVICE LETTERS, 1990, 11 (10) : 431 - 433
  • [9] Relaxed state of GexSi1-x islands embedded in Si
    d'Acapito, F
    de Seta, M
    Capellini, G
    di Gaspare, L
    Evangelisti, F
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2006, 246 (01): : 64 - 68
  • [10] ACCOMMODATION OF LATTICE MISMATCH IN GEXSI1-X/SI SUPERLATTICES
    MILES, RH
    CHOW, PP
    JOHNSON, DC
    HAUENSTEIN, RJ
    MARSH, OJ
    NIEH, CW
    STRATHMAN, MD
    MCGILL, TC
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (04): : 1382 - 1385
12345