LATTICE RELAXATIONS AT SUBSTITUTIONAL IMPURITIES IN SEMICONDUCTORS.

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作者：

Scheffler, Matthias ^{[1
]}

机构：

[1] Physikalisch Technische, Bundesanstalt, Braunschweig, West, Ger, Physikalisch Technische Bundesanstalt, Braunschweig, West Ger

来源：

Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics | 1986年 / 146卷 / 1-2期

关键词：

I thank T. Morgan; A. Fleszar and R. Resta for helpful discussions.I am grateful to G.B. Bachelet and P. Kelly for critically reading the manuscripta nd to Ch. Droste for help in the numericalc alculationso f fig. 5. Part of this work was supported by the Deutsche Forschungs-;

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摘要：

引用

页码：176 / 186

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