High-breakdown and high-linearity Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic HEMT

被引：0

作者：

Liu, W.C. ^{[1
]}

Chang, W.L. ^{[1
]}

Chen, J.Y. ^{[1
]}

Yu, K.H. ^{[1
]}

Feng, S.C. ^{[1
]}

Yan, J.H. ^{[1
]}

机构：

[1] Natl Cheng-Kung Univ, Tainan, Taiwan

来源：

Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD | 1998年

关键词：

Current density - Electric breakdown of solids - Electric frequency measurement - Energy gap - Gates (transistor) - Semiconducting gallium compounds - Semiconducting indium gallium arsenide - Semiconductor device manufacture - Transconductance;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

High-breakdown and high-linearity Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic HEMT's have been fabricated successfully and demonstrated. A extremely high gate-to-drain breakdown voltage of 40 V is obtained by using a wide-gap Ga0.51In0.49P Schottky contact layer. For a 1 μm-gate length device, the transconductance and output current density at room temperature are 90 mS/mm and 646 mA/mm, respectively. The measured fT and fmax are 12 and 28.4 GHz, respectively. Therefore, the studied device shows a promise for microwave power applications.

引用

页码：457 / 459

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