NEW MNOS MEMORY ELEMENT - THE TUNNEL DIODE.

被引:0
|
作者
Rutter, P.
机构
关键词
D O I
暂无
中图分类号
学科分类号
摘要
DATA STORAGE, SEMICONDUCTOR
引用
收藏
页码:681 / 687
相关论文
共 50 条
  • [1] A NEW MNOS MEMORY-ELEMENT - THE TUNNEL-DIODE
    RUTTER, P
    SOLID-STATE ELECTRONICS, 1981, 24 (07) : 689 - 694
  • [2] Large-Signal Model of a Tunnel Diode.
    Rusek, Andrzej
    Elektronika, 1977, 18 (02): : 73 - 75
  • [3] TERNARY MEMORY ELEMENT USING TUNNEL DIODE
    SALTER, F
    IEEE TRANSACTIONS ON COMPUTERS, 1964, EC13 (02) : 155 - &
  • [4] GUNN DIODE.
    Acket, G.A.
    Tijburg, R.
    de Waard, P.J.
    Philips Technical Review, 1971, 32 (9 -10-11-12): : 370 - 379
  • [5] TUNNEL DIODE MEMORY
    TIMOKHIN, LA
    FLORENTS.SN
    INSTRUMENTS AND EXPERIMENTAL TECHNIQUES-USSR, 1965, (02): : 317 - &
  • [6] Schottky Diode.
    Henne, W.
    1600, (63):
  • [7] ON THE NOISE IN AN S DIODE.
    Serebrennikov, P.S.
    Radio Engineering and Electronic Physics (English translation of Radiotekhnika i Elektronika), 1976, 21 (06): : 113 - 117
  • [8] TRANSIENT RESPONSE OF DIODE.
    Shrivastava, K.K.
    Shrivastava, H.M.
    Verma, B.P.
    Journal of the Institution of Engineers (India), Public Health Engineering Division, 1973, 53 (Part ET 4): : 149 - 154
  • [9] PROTONIC RECTIFIER DIODE.
    Langer, J.J.
    Applied Physics A: Solids and Surfaces, 1985, A38 (01): : 59 - 60
  • [10] TUNNEL DIODE AS A TRISTABLE ELEMENT OF CIRCUIT
    STANCHI, L
    PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (01): : 68 - &