Influence of nitride and oxide cap layers upon the annealing of 1.3 μm GaInNAs/GaAs quantum wells

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[1] Liu, H.F.
[2] Peng, C.S.
[3] 1,Likonen, J.
[4] Jouhti, T.
[5] Karirinne, S.
[6] Konttinen, J.
[7] Pessa, M.
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Liu, H.F. (hongfei.liu@orc.tut.fi) | 1600年 / American Institute of Physics Inc.卷 / 95期
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