Two-dimensionally position-controlled excimer-laser-crystallization of silicon thin films on glassy substrate

被引：0

作者：

Ozawa, Motohiro ^{[1
]}

Chang-Ho, O.H. ^{[1
]}

Matsumura, Masakiyo ^{[1
]}

机构：

[1] Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayania, Meguro-kii, Tokyo 152-8550, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1999年 / 38卷 / 10期

关键词：

Crystallization - Excimer lasers - Grain size and shape - Light absorption - Masks - Semiconducting glass - Semiconducting silicon - Semiconductor growth - Silicon on insulator technology - Space heating - Substrates - Thin films;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Nucleus positions have been two-dimensionally controlled in excimer-laser-crystallized Si thin-films on a glassy substrate. The position along one direction on the surface was controlled by intensity gradient of the excimer-laser light. The position control along the other direction was achieved by pre-patterning of the Si thin film as fine line structures and by heating the space between the lines with a light absorption layer. SiON was suitable as an absorption layer for KrF excimer-laser light. The grains grown were as long as 7 mm, even for ultra-thin (50-nm-thick) Si films.

引用

页码：5700 / 5705

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