Two-dimensionally position-controlled excimer-laser-crystallization of silicon thin films on glassy substrate

Nucleus positions have been two-dimensionally controlled in excimer-laser-crystallized Si thin-films on a glassy substrate. The position along one direction on the surface was controlled by intensity gradient of the excimer-laser light. The position control along the other direction was achieved by pre-patterning of the Si thin film as fine line structures and by heating the space between the lines with a light absorption layer. SiON was suitable as an absorption layer for KrF excimer-laser light. The grains grown were as long as 7 mm, even for ultra-thin (50-nm-thick) Si films.