首页
学术期刊
论文检测
AIGC检测
热点
更多
数据
Electrical and structural properties of Be- and Si-doped low-temperature-grown GaAs
被引:0
|
作者
:
机构
:
来源
:
J Appl Phys
|
/ 4卷
/ 1471期
关键词
:
D O I
:
暂无
中图分类号
:
学科分类号
:
摘要
:
引用
收藏
相关论文
共 50 条
[41]
ANNEALING STUDIES OF LOW-TEMPERATURE-GROWN GAAS-BE
BLISS, DE
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,DEPT MAT SCI & MINERAL ENGN,BERKELEY,CA 94720
BLISS, DE
WALUKIEWICZ, W
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,DEPT MAT SCI & MINERAL ENGN,BERKELEY,CA 94720
WALUKIEWICZ, W
AGER, JW
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,DEPT MAT SCI & MINERAL ENGN,BERKELEY,CA 94720
AGER, JW
HALLER, EE
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,DEPT MAT SCI & MINERAL ENGN,BERKELEY,CA 94720
HALLER, EE
CHAN, KT
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,DEPT MAT SCI & MINERAL ENGN,BERKELEY,CA 94720
CHAN, KT
TANIGAWA, S
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,DEPT MAT SCI & MINERAL ENGN,BERKELEY,CA 94720
TANIGAWA, S
JOURNAL OF APPLIED PHYSICS,
1992,
71
(04)
: 1699
-
1707
[42]
DEFECTS AND ARSENIC DISTRIBUTION IN LOW-TEMPERATURE-GROWN GAAS
HOZHABRI, N
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TEXAS,DEPT ELECT ENGN,ARLINGTON,TX 76019
UNIV TEXAS,DEPT ELECT ENGN,ARLINGTON,TX 76019
HOZHABRI, N
KOYMEN, AR
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TEXAS,DEPT ELECT ENGN,ARLINGTON,TX 76019
UNIV TEXAS,DEPT ELECT ENGN,ARLINGTON,TX 76019
KOYMEN, AR
SHARMA, SC
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TEXAS,DEPT ELECT ENGN,ARLINGTON,TX 76019
UNIV TEXAS,DEPT ELECT ENGN,ARLINGTON,TX 76019
SHARMA, SC
ALAVI, K
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TEXAS,DEPT ELECT ENGN,ARLINGTON,TX 76019
UNIV TEXAS,DEPT ELECT ENGN,ARLINGTON,TX 76019
ALAVI, K
APPLIED SURFACE SCIENCE,
1995,
85
(1-4)
: 311
-
314
[43]
Bistability of charge accumulated in low-temperature-grown GaAs
Brounkov, PN
论文数:
0
引用数:
0
h-index:
0
机构:
AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
Brounkov, PN
Chaldyshev, VV
论文数:
0
引用数:
0
h-index:
0
机构:
AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
Chaldyshev, VV
Suvorova, AA
论文数:
0
引用数:
0
h-index:
0
机构:
AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
Suvorova, AA
Bert, NA
论文数:
0
引用数:
0
h-index:
0
机构:
AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
Bert, NA
Konnikov, SG
论文数:
0
引用数:
0
h-index:
0
机构:
AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
Konnikov, SG
Chernigovskii, AV
论文数:
0
引用数:
0
h-index:
0
机构:
AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
Chernigovskii, AV
Preobrazhenskii, VV
论文数:
0
引用数:
0
h-index:
0
机构:
AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
Preobrazhenskii, VV
Putyato, MA
论文数:
0
引用数:
0
h-index:
0
机构:
AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
Putyato, MA
Semyagin, BR
论文数:
0
引用数:
0
h-index:
0
机构:
AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
Semyagin, BR
APPLIED PHYSICS LETTERS,
1998,
73
(19)
: 2796
-
2798
[44]
FEMTOSECOND CARRIER KINETICS IN LOW-TEMPERATURE-GROWN GAAS
ZHOU, XQ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TORONTO,DEPT PHYS,TORONTO M5S 1A7,ONTARIO,CANADA
ZHOU, XQ
VANDRIEL, HM
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TORONTO,DEPT PHYS,TORONTO M5S 1A7,ONTARIO,CANADA
VANDRIEL, HM
RUHLE, WW
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TORONTO,DEPT PHYS,TORONTO M5S 1A7,ONTARIO,CANADA
RUHLE, WW
GOGOLAK, Z
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TORONTO,DEPT PHYS,TORONTO M5S 1A7,ONTARIO,CANADA
GOGOLAK, Z
PLOOG, K
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TORONTO,DEPT PHYS,TORONTO M5S 1A7,ONTARIO,CANADA
PLOOG, K
APPLIED PHYSICS LETTERS,
1992,
61
(25)
: 3020
-
3021
[45]
Ohmic nanocontacts to GaAs using undoped and p-doped layers of low-temperature-grown GaAs
Lee, T
论文数:
0
引用数:
0
h-index:
0
机构:
Purdue Univ, Dept Phys, W Lafayette, IN 47907 USA
Purdue Univ, Dept Phys, W Lafayette, IN 47907 USA
Lee, T
Chen, NP
论文数:
0
引用数:
0
h-index:
0
机构:
Purdue Univ, Dept Phys, W Lafayette, IN 47907 USA
Chen, NP
Liu, J
论文数:
0
引用数:
0
h-index:
0
机构:
Purdue Univ, Dept Phys, W Lafayette, IN 47907 USA
Liu, J
Andres, RP
论文数:
0
引用数:
0
h-index:
0
机构:
Purdue Univ, Dept Phys, W Lafayette, IN 47907 USA
Andres, RP
Janes, DB
论文数:
0
引用数:
0
h-index:
0
机构:
Purdue Univ, Dept Phys, W Lafayette, IN 47907 USA
Janes, DB
Chen, EH
论文数:
0
引用数:
0
h-index:
0
机构:
Purdue Univ, Dept Phys, W Lafayette, IN 47907 USA
Chen, EH
Melloch, MR
论文数:
0
引用数:
0
h-index:
0
机构:
Purdue Univ, Dept Phys, W Lafayette, IN 47907 USA
Melloch, MR
Woodall, JM
论文数:
0
引用数:
0
h-index:
0
机构:
Purdue Univ, Dept Phys, W Lafayette, IN 47907 USA
Woodall, JM
Reifenberger, R
论文数:
0
引用数:
0
h-index:
0
机构:
Purdue Univ, Dept Phys, W Lafayette, IN 47907 USA
Reifenberger, R
APPLIED PHYSICS LETTERS,
2000,
76
(02)
: 212
-
214
[46]
EVIDENCE FOR SUPERCONDUCTIVITY IN LOW-TEMPERATURE-GROWN GAAS - REPLY
BARANOWSKI, JM
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,LAWRENCE BERKELEY LAB,DIV MAT SCI,BERKELEY,CA 94720
BARANOWSKI, JM
LILIENTALWEBER, Z
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,LAWRENCE BERKELEY LAB,DIV MAT SCI,BERKELEY,CA 94720
LILIENTALWEBER, Z
YAU, WF
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,LAWRENCE BERKELEY LAB,DIV MAT SCI,BERKELEY,CA 94720
YAU, WF
WEBER, ER
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,LAWRENCE BERKELEY LAB,DIV MAT SCI,BERKELEY,CA 94720
WEBER, ER
PHYSICAL REVIEW LETTERS,
1992,
68
(04)
: 551
-
551
[47]
Non-equilibrium critical point in Be-doped low-temperature-grown GaAs
Mohamed, Mohd Ambri
论文数:
0
引用数:
0
h-index:
0
机构:
School of Materials Science, Japan Advanced Institute of Science and Technology, Asahidai 1-1, Nomishi
Mohamed, Mohd Ambri
Pham Tien Lam
论文数:
0
引用数:
0
h-index:
0
机构:
School of Materials Science, Japan Advanced Institute of Science and Technology, Asahidai 1-1, Nomishi
Pham Tien Lam
Otsuka, N.
论文数:
0
引用数:
0
h-index:
0
机构:
School of Materials Science, Japan Advanced Institute of Science and Technology, Asahidai 1-1, Nomishi
Otsuka, N.
JOURNAL OF APPLIED PHYSICS,
2013,
113
(05)
[48]
Picosecond spin relaxation in low-temperature-grown GaAs
Uemura, M.
论文数:
0
引用数:
0
h-index:
0
机构:
Waseda Univ, Dept Appl Phys, Tokyo 1698555, Japan
Waseda Univ, Dept Appl Phys, Tokyo 1698555, Japan
Uemura, M.
Honda, K.
论文数:
0
引用数:
0
h-index:
0
机构:
Waseda Univ, Dept Appl Phys, Tokyo 1698555, Japan
Waseda Univ, Dept Appl Phys, Tokyo 1698555, Japan
Honda, K.
Yasue, Y.
论文数:
0
引用数:
0
h-index:
0
机构:
Waseda Univ, Dept Appl Phys, Tokyo 1698555, Japan
Waseda Univ, Dept Appl Phys, Tokyo 1698555, Japan
Yasue, Y.
Lu, S. L.
论文数:
0
引用数:
0
h-index:
0
机构:
Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou, Peoples R China
Waseda Univ, Dept Appl Phys, Tokyo 1698555, Japan
Lu, S. L.
Dai, P.
论文数:
0
引用数:
0
h-index:
0
机构:
Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou, Peoples R China
Waseda Univ, Dept Appl Phys, Tokyo 1698555, Japan
Dai, P.
Tackeuchi, A.
论文数:
0
引用数:
0
h-index:
0
机构:
Waseda Univ, Dept Appl Phys, Tokyo 1698555, Japan
Waseda Univ, Dept Appl Phys, Tokyo 1698555, Japan
Tackeuchi, A.
APPLIED PHYSICS LETTERS,
2014,
104
(12)
[49]
Reduced thermal conductivity in low-temperature-grown GaAs
Jackson, AW
论文数:
0
引用数:
0
h-index:
0
机构:
Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
Jackson, AW
Ibbetson, JP
论文数:
0
引用数:
0
h-index:
0
机构:
Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
Ibbetson, JP
Gossard, AC
论文数:
0
引用数:
0
h-index:
0
机构:
Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
Gossard, AC
Mishra, UK
论文数:
0
引用数:
0
h-index:
0
机构:
Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
Mishra, UK
APPLIED PHYSICS LETTERS,
1999,
74
(16)
: 2325
-
2327
[50]
Low-temperature-grown MBE GaAs for terahertz photomixers
Mikulics, M
论文数:
0
引用数:
0
h-index:
0
机构:
Res Ctr Julich, Inst Thin Films & Interfaces, D-52425 Julich, Germany
Res Ctr Julich, Inst Thin Films & Interfaces, D-52425 Julich, Germany
Mikulics, M
Marso, M
论文数:
0
引用数:
0
h-index:
0
机构:
Res Ctr Julich, Inst Thin Films & Interfaces, D-52425 Julich, Germany
Res Ctr Julich, Inst Thin Films & Interfaces, D-52425 Julich, Germany
Marso, M
Adam, R
论文数:
0
引用数:
0
h-index:
0
机构:
Res Ctr Julich, Inst Thin Films & Interfaces, D-52425 Julich, Germany
Res Ctr Julich, Inst Thin Films & Interfaces, D-52425 Julich, Germany
Adam, R
Fox, A
论文数:
0
引用数:
0
h-index:
0
机构:
Res Ctr Julich, Inst Thin Films & Interfaces, D-52425 Julich, Germany
Res Ctr Julich, Inst Thin Films & Interfaces, D-52425 Julich, Germany
Fox, A
Buca, D
论文数:
0
引用数:
0
h-index:
0
机构:
Res Ctr Julich, Inst Thin Films & Interfaces, D-52425 Julich, Germany
Res Ctr Julich, Inst Thin Films & Interfaces, D-52425 Julich, Germany
Buca, D
Förster, A
论文数:
0
引用数:
0
h-index:
0
机构:
Res Ctr Julich, Inst Thin Films & Interfaces, D-52425 Julich, Germany
Res Ctr Julich, Inst Thin Films & Interfaces, D-52425 Julich, Germany
Förster, A
Kordos, P
论文数:
0
引用数:
0
h-index:
0
机构:
Res Ctr Julich, Inst Thin Films & Interfaces, D-52425 Julich, Germany
Res Ctr Julich, Inst Thin Films & Interfaces, D-52425 Julich, Germany
Kordos, P
Xu, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Res Ctr Julich, Inst Thin Films & Interfaces, D-52425 Julich, Germany
Res Ctr Julich, Inst Thin Films & Interfaces, D-52425 Julich, Germany
Xu, Y
Sobolewski, R
论文数:
0
引用数:
0
h-index:
0
机构:
Res Ctr Julich, Inst Thin Films & Interfaces, D-52425 Julich, Germany
Res Ctr Julich, Inst Thin Films & Interfaces, D-52425 Julich, Germany
Sobolewski, R
EDMO 2001: INTERNATIONAL SYMPOSIUM ON ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS,
2001,
: 155
-
159
←
1
2
3
4
5
→