ON THE FERMI LEVEL PINNING AT Ge/GaAs(110) INTERFACE.

被引：0

作者：

Xu Zhizhong ^{[1
]}

机构：

[1] Fudan Univ, Shanghai, China, Fudan Univ, Shanghai, China

来源：

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 1988年 / 9卷 / 01期

关键词：

CRYSTALS - Structure - SEMICONDUCTING GALLIUM ARSENIDE;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

By semi-empirical TB method and saturated slab model, the electronic states on the GaAs(110) surface adsorbed by Ge atoms in different coverages have been calculated. Combining with previous theoretical and experimental studies, an idea on the problem of Fermi level pinning on the Ge/GaAs(110) interface is suggested.

引用

页码：82 / 85

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