High-Tc ramp-type Josephson junctions for rapid single flux quantum circuits

被引：0

作者：

Huang, M.Q. ^{[1
]}

Ivanov, Z.G. ^{[1
]}

Komissinski, P.V. ^{[1
]}

Mozhaev, P.B. ^{[1
]}

Claeson, T. ^{[1
]}

机构：

[1] Univ of Technology and Univ of, Goteborg, Goteborg, Sweden

来源：

Journal of low temperature physics | 1999年 / 117卷 / 03期

关键词：

Critical current density (superconductivity) - Current voltage characteristics - Heat conduction - High temperature superconductors - Praseodymium alloys - Quantum interference devices - Semiconductor device manufacture - Yttrium barium copper oxides;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Ramp-type Josephson junctions with YBCO superconducting electrodes and PrBa2Cu2.6Ga0.4O6+δ (PBGCO) barriers were fabricated and characterized. The YBCO ramp junctions with 25 nm-thick barriers of PBGCO showed typical resistively-shunted-junction (RSJ)-like I-V behavior and 1 σ spread of less than 13% in critical current density. Differential conductance-voltage characteristics registered using a lock-in technique indicate that the resonant tunneling via localized states in the barriers plays a dominant role in the conduction process of the ramp junctions.

引用

页码：587 / 591

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