Si1-yCy/Si(001) gas-source molecular beam epitaxy from Si2H6 and CH3SiH3: Surface reaction paths and growth kinetics

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[1] Foo, Y.L.
[2] Bratland, K.A.
[3] Cho, B.
[4] Desjardins, P.
[5] Greene, J.E.
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Greene, J.E. (jegreene@uiuc.edu) | 1600年 / American Institute of Physics Inc.卷 / 93期
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