EXCITON TRANSPORT IN OPTICALLY EXCITED AlxGa1 - xAs-GaAs SINGLE QUANTUM WELL.

被引:0
|
作者
Le, H.Q.
Lax, B.
Maki, P.A.
Palmateer, S.C.
Eastman, L.F.
机构
[1] Francis Bitter National Magnet Laboratory, Massachusetts Institute of Technology, Cambridge, MA 02139, United States
[2] Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02173, United States
[3] School of Electrical Engineering, Cornell University, Ithaca, NY 14853, United States
来源
| 1600年 / 55期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [41] EXPERIMENTAL EXCITON BINDING-ENERGIES IN GAAS ALXGA1-XAS QUANTUM WELLS AS A FUNCTION OF WELL WIDTH
    KOTELES, ES
    CHI, JY
    PHYSICAL REVIEW B, 1988, 37 (11): : 6332 - 6335
  • [42] EFFECT OF INTERDIFFUSION ON THE SUBBANDS IN AN ALXGA1-XAS/GAAS SINGLE-QUANTUM-WELL STRUCTURE
    LI, EH
    WEISS, BL
    CHAN, KS
    PHYSICAL REVIEW B, 1992, 46 (23): : 15181 - 15192
  • [43] Refractive index change of a D2+ complex in GaAs/AlxGa1−xAs quantum ring
    N. Hernández
    R. A. López-Doria
    I. E. Rivera
    M. R. Fulla
    Journal of Materials Science, 2022, 57 : 8417 - 8424
  • [44] The theory and experiment of very-long-wavelength 256×1 GaAs/AlxGa1−xAs quantum well infrared detector linear arrays
    FangMin Guo
    Ning Li
    DaYuan Xiong
    HongLou Zhen
    XiangYan Xu
    Ying Hou
    RuiJun Ding
    Wei Lu
    Qi Huang
    JunMing Zhou
    Science in China Series G: Physics, Mechanics and Astronomy, 2008, 51 : 805 - 812
  • [45] QUANTUM-CONFINED STARK-EFFECT ON AN EXCITON IN A SPHERICAL QUANTUM WELL OF A GAAS CLUSTER EMBEDDED IN ALXGA1-XAS
    CHIBA, Y
    OHNISHI, S
    SUPERLATTICES AND MICROSTRUCTURES, 1989, 6 (01) : 23 - 26
  • [46] THE DETERMINATION OF BARRIER HEIGHT DURING VERTICAL TRANSPORT IN GaAs/AlXGa1-XAs QUANTUM WELL STRUCTURES
    Algun, Gokhan
    SIGMA JOURNAL OF ENGINEERING AND NATURAL SCIENCES-SIGMA MUHENDISLIK VE FEN BILIMLERI DERGISI, 2008, 26 (03): : 206 - 215
  • [47] HIGH PRESSURE MEASUREMENTS ON PHOTOPUMPED LOW THRESHOLD AlxGa1 - xAs QUANTUM WELL LASERS.
    Camras, M.D.
    Holonyak Jr., N.
    Coleman, J.J.
    Drickamer, H.G.
    Burnham, R.D.
    Steifer, W.
    Scifres, D.R.
    Lindstrom, C.
    Paoli, T.P.
    1600, (54):
  • [48] AlxGa1 − xAs/GaAs(100) hetermostructures with anomalously high carrier mobility
    P. V. Seredin
    D. L. Goloshchapov
    A. S. Lenshin
    V. E. Ternovaya
    I. N. Arsentyev
    D. N. Nikolaev
    I. S. Tarasov
    V. V. Shamakhov
    A. V. Popov
    Semiconductors, 2015, 49 : 1019 - 1024
  • [49] EXCITON BINDING-ENERGY IN A GAAS/ALXGA1-XAS QUANTUM-WELL WITH UNIFORM ELECTRIC-FIELD
    CHUU, DS
    SHIH, YT
    PHYSICAL REVIEW B, 1991, 44 (15) : 8054 - 8060
  • [50] The exciton transition energies in symmetric double GaAs/AlxGa1-xAs quantum wells
    Okan, SE
    Aktas, S
    Akbas, H
    Tomak, M
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1999, 212 (02): : 263 - 270