Theory of quantum-dot infrared phototransistors

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作者：
Univ of Aizu, Aizu-Wakamatsu, Japan [1 ]
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来源：
Semicond Sci Technol | / 5卷 / 759-765期
关键词：
Calculations - Electric currents - Electron transitions - Infrared radiation - Mathematical models - Photodetectors - Photodiodes - Photoelectricity - Photosensitivity - Semiconductor device structures - Semiconductor quantum dots;
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摘要：
A novel device - the quantum-dot infrared phototransistor (QDIP) - is proposed and considered theoretically. The QDIP utilizes intersubband electron transitions from the bound states. The dark current and sensitivity are calculated using a proposed analytical model of the QDIP. It is shown that the QDIP can exhibit low dark current, high photoelectric gain and sensitivity surpassing the characteristics of other intersubband photodetectors.
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