共 50 条
- [1] Time-resolved photoluminescence study of excitons in hexagonal GaN layers grown on sapphire PHYSICAL REVIEW B, 1998, 57 (12): : 7066 - 7070
- [2] Near-bandgap photoluminescence decay time in GaN epitaxial layers grown on sapphire GALLIUM NITRIDE AND RELATED MATERIALS, 1996, 395 : 559 - 564
- [3] Contribution of excitons in the photoluminescence spectra of h-GaN epitaxial layers grown on sapphire substrates by TF-MOCVD BLUE LASER AND LIGHT EMITTING DIODES, 1996, : 202 - 205
- [4] Time-resolved photoluminescence in strained GaN layers PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2001, 183 (01): : 151 - 155
- [5] Photoluminescence studies of GaN:: A comparison between layers grown on sapphire and nitridated GaAs layers PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2005, 242 (09): : 1883 - 1886
- [6] Time-resolved photoluminescence characterization of GaN layers grown by metalorganic chemical vapor deposition DEFECT RECOGNITION AND IMAGE PROCESSING IN SEMICONDUCTORS 1997, 1998, 160 : 351 - 354
- [7] Time- and temperature-resolved photoluminescence of GaN:Mg epitaxial layers grown by MOVPE PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2001, 228 (02): : 361 - 364
- [8] Interface structural defects and photoluminescence properties of epitaxial GaN and AlGaN/GaN layers grown on sapphire Semiconductors, 2006, 40 : 1060 - 1065