Interface structural defects and photoluminescence properties of epitaxial GaN and AlGaN/GaN layers grown on sapphire

被引：0
|
作者：
V. P. Klad’ko
S. V. Chornen’kii
A. V. Naumov
A. V. Komarov
M. Tacano
Yu. N. Sveshnikov
S. A. Vitusevich
A. E. Belyaev
机构：
[1] National Academy of Sciences of Ukraine,Lashkarev Institute of Semiconductor Physics
[2] National Academy of Sciences of Ukraine,Institute of Physics
[3] AMRC,undefined
[4] Meisei University,undefined
[5] ZAO Élma-Malakhit,undefined
来源：
Semiconductors | 2006年 / 40卷
关键词：
61.10.Nz; 68.35.Ct; 68.55Jk; 78.55.Cr;
D O I：
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中图分类号：
学科分类号：
摘要：
Overall characterization of the GaN and AlGaN/GaN epitaxial layers by X-ray diffractometry and optical spectral analysis is carried out. The layers are grown by metalloorganic gas-phase epitaxy on (0001)-oriented single crystal sapphire wafers. The components of strains and the density of dislocations are determined. The effects of strains and dislocations on the photoluminescence intensity and spectra are studied. The results allow better understanding of the nature and mechanisms of the formation of defects in the epitaxial AlGaN/GaN heterostructures.
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页码：1060 / 1065
页数：5
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