Picosecond optical nonlinearities in a strained InAs/GaAs hetero n-i-p-i structure

被引:0
|
作者
机构
来源
| 1600年 / 71期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [31] THEORETICAL APPROACH FOR N-I-P-I SILICON
    PRIESTER, C
    ALLAN, G
    LANNOO, M
    FISHMAN, G
    PHYSICAL REVIEW B, 1987, 35 (06): : 2904 - 2908
  • [32] GAAS LEDS WITH N-I-P-I ACTIVE LAYERS FABRICATED BY SELECTIVE CONTACT DIFFUSION
    ACKLEY, DE
    MANTZ, J
    LEE, H
    NOURI, N
    SHIEH, CL
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (12) : 2455 - 2455
  • [33] A NEW CONCEPT FOR OPTICAL LOGIC GATES BASED ON N-I-P-I CRYSTALS
    DOHLER, GH
    KIESEL, P
    LIN, H
    RIEL, P
    EBELING, K
    MILLER, JN
    ANNALES DE PHYSIQUE, 1991, 16 (01) : 83 - 85
  • [34] DOPING SUPERLATTICES (N-I-P-I CRYSTALS)
    DOHLER, GH
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) : 1682 - 1695
  • [35] Saturation of absorption in n-i-p-i crystals
    Ushakov, DV
    Konenenko, VK
    Manak, IS
    OPTICS OF CRYSTALS, 2001, 4358 : 171 - 174
  • [36] OPTOELECTRONICS WITH N-I-P-I DOPING SUPERLATTICES
    DOHLER, GH
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1992, (127): : 189 - 194
  • [37] Novel lateral n-i-p-i structure heterojunction quantum wire transistor
    Yoh, Kanji
    Takabayashi, Shingo
    Annual Device Research Conference Digest, 1999, : 72 - 73
  • [38] RAMAN-SCATTERING FROM ELEMENTARY EXCITATIONS IN GAAS WITH N-I-P-I DOPING SUPERLATTICES
    FASOL, G
    RUDEN, P
    PLOOG, K
    JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (08): : 1395 - 1403
  • [39] Photonic bandgap structures with n-i-p-i layers
    Smirnov, AG
    Ushakov, DV
    Kononenko, VK
    SARATOV FALL MEETING 2001: LASER PHYSICS AND PHOTONICS SPECTROSCOPY, AND MOLECULAR MODELING II, 2002, 4706 : 70 - 76
  • [40] MAGNETOPLASMON POLARITONS IN FINITE N-I-P-I SUPERLATTICES
    ALBUQUERQUE, EL
    FULCO, P
    FARIAS, GA
    AUTO, MM
    TILLEY, DR
    PHYSICAL REVIEW B, 1991, 43 (03): : 2032 - 2041