Excitonic stimulated emission of ZnSe: SnS/GaAs MQWs at room temperature

被引：0
|
作者：
Shen, De Z. [1 ]
Fan, Xi W. [1 ]
Wang, W.B. [1 ]
Yang, B.J. [1 ]
机构：
[1] Changchun Inst. of Physics, Changchun, China
来源：
Proceedings of SPIE - The International Society for Optical Engineering | 1994年 / 2321卷
基金：
中国国家自然科学基金;
关键词：
Absorption spectrum - Excitonic stimulated emission - Gallium arsenide - Multiple quantum wells - Photoluminescence spectra - Zinc selenide - Zinc sulfide;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：34 / 36
相关论文
共 50 条
  • [41] Structural properties of MOVPE-grown ZnMgSe epilayers and ZnSe/ZnMgSe MQWs on (100) GaAs
    Prete, P
    Lovergine, N
    Tapfer, L
    Mancini, AM
    OPTICAL MATERIALS, 2001, 17 (1-2) : 207 - 210
  • [42] STIMULATED EMISSION OF EXCITONIC MOLECULE IN CUCL SINGLE CRYSTALS
    SOUMA, H
    SUZUKI, K
    UETA, M
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1971, 30 (02) : 589 - &
  • [43] Time resolved stimulated emission in excitonic semiconductor microcavities
    Bloch, J
    Sermage, B
    Jacquot, C
    Senellart, P
    Thierry-Mieg, V
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2002, 13 (2-4): : 390 - 393
  • [44] EXCITONIC EMISSION IN ZNCDSE-ZNSE MULTIPLE-QUANTUM WELLS
    ZHANG, JY
    FAN, XW
    YANG, BJ
    GUAN, ZP
    LU, YM
    SHEN, DZ
    JOURNAL OF CRYSTAL GROWTH, 1994, 138 (1-4) : 838 - 841
  • [45] Efficient, narrow linewidth excitonic emission at room temperature from GaAs/AlGaAs V-groove quantum wire light-emitting diodes
    Weman, H
    Dupertuis, MA
    Martinet, E
    Rudra, A
    Kapon, E
    APPLIED PHYSICS LETTERS, 2001, 79 (01) : 4 - 6
  • [46] Inducing room-temperature valley polarization of excitonic emission in transition metal dichalcogenide monolayers
    Sergii Morozov
    Torgom Yezekyan
    Christian Wolff
    Sergey I. Bozhevolnyi
    N. Asger Mortensen
    npj 2D Materials and Applications, 8
  • [47] ROOM-TEMPERATURE EXCITONIC NONLINEAR ABSORPTION AND REFRACTION IN GAAS/ALGAAS MULTIPLE QUANTUM WELL STRUCTURES
    CHEMLA, DS
    MILLER, DAB
    SMITH, PW
    GOSSARD, AC
    WIEGMANN, W
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1984, 20 (03) : 265 - 275
  • [48] Temperature dependence of excitonic transition in ZnSe/ZnCdSe quantum wells
    GUO Zi-zheng~(1
    OptoelectronicsLetters, 2005, (03) : 10 - 13
  • [49] Excitonic luminescence from nonsymmetric heterovalent AlAs/GaAs/ZnSe quantum wells
    Kudelski, A
    Bindley, U
    Furdyna, JK
    Dobrowolska, M
    Wojtowicz, T
    APPLIED PHYSICS LETTERS, 2003, 82 (12) : 1854 - 1856
  • [50] Optical and Excitonic Properties of Crystalline ZnS Nanowires: Toward Efficient Ultraviolet Emission at Room Temperature
    Chen, Rui
    Li, Dehui
    Liu, Bo
    Peng, Zeping
    Gurzadyan, Gagik G.
    Xiong, Qihua
    Sun, Handong
    NANO LETTERS, 2010, 10 (12) : 4956 - 4961
12345