Epitaxial lateral overgrowth of GaAs on a Si substrate

被引：0
|
作者：
机构：
[1] Ujiie, Yoshinori
[2] Nishinaga, Tatau
来源：
Ujiie, Yoshinori | 1600年 / 28期
关键词：
Semiconducting Gallium Arsenide;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
下载
收藏
相关论文
共 50 条
  • [41] Raman study of epitaxial lateral overgrowth of GaN on patterned sapphire substrate
    Kang, D. H.
    Song, J. C.
    Song, H.
    Kim, D. W.
    Lee, I. H.
    Santhakumar, K.
    Lee, C. R.
    SEMICONDUCTOR PHOTONICS: NANO-STRUCTURED MATERIALS AND DEVICES, 2008, 31 : 111 - +
  • [42] INP LAYER GROWN ON (001)SILICON SUBSTRATE BY EPITAXIAL LATERAL OVERGROWTH
    NARITSUKA, S
    NISHINAGA, T
    TACHIKAWA, M
    MORI, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (11A): : L1432 - L1435
  • [43] Epitaxial lateral overgrowth of GaN
    Usui, A
    Sakai, A
    ADVANCES IN CRYSTAL GROWTH RESEARCH, 2001, : 191 - 209
  • [44] Epitaxial lateral overgrowth of GaN
    Beaumont, B
    Vennéguès, P
    Gibart, P
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2001, 227 (01): : 1 - 43
  • [45] Epitaxial lateral overgrowth of GaN on 4 inch Si(111) by MOVPE
    Cheng, Kai
    Motsnyi, V.
    Leys, M.
    Degroote, S.
    Sijmus, B.
    Germain, M.
    Borghs, G.
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6, 2008, 5 (06): : 1624 - 1626
  • [46] Selective-Area Epitaxial Lateral Overgrowth of InGaAs Microdiscs on Si
    Sugiyama, M.
    SIGE, GE, AND RELATED COMPOUNDS 5: MATERIALS, PROCESSING, AND DEVICES, 2012, 50 (09): : 313 - 319
  • [47] Epitaxial lateral overgrowth of Si on (100)Si substrates by liquid-phase epitaxy
    Weber, KJ
    Catchpole, K
    Blakers, AW
    JOURNAL OF CRYSTAL GROWTH, 1998, 186 (03) : 369 - 374
  • [48] Epitaxial lateral overgrowth in the system Si/SiOx/Si: The influence of residual oxygen at the interface
    Hanke, M.
    Koehler, R.
    Schaefer, P.
    Luebbert, D.
    Haeusler, I.
    Neumann, W.
    Modregger, P.
    Boeck, T.
    Baumbach, T.
    PHYSICAL REVIEW B, 2011, 83 (12)
  • [49] The application of Makyoh topography for the study of GaAs layers grown by epitaxial lateral overgrowth
    Riesz, F
    Zytkiewicz, ZR
    JOURNAL OF CRYSTAL GROWTH, 2001, 222 (04) : 741 - 746
  • [50] LATERAL EPITAXIAL OVERGROWTH OF GAAS AND GAALAS ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION
    GALE, RP
    MCCLELLAND, RW
    FAN, JCC
    BOZLER, CO
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1983, (65): : 101 - 108
12345