共 50 条
- [1] EPITAXIAL LATERAL OVERGROWTH OF GAAS ON A SI SUBSTRATE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1989, 28 (03): : L337 - L339
- [3] EFFECT OF SI DOPING ON EPITAXIAL LATERAL OVERGROWTH OF GAAS ON GAAS-COATED SI SUBSTRATE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1992, 31 (3B): : L359 - L361
- [5] Influence of si doping on epitaxial lateral overgrowth of GaAs [J]. HETEROSTRUCTURE EPITAXY AND DEVICES: HEAD '97, 1998, 48 : 71 - 74
- [7] EPITAXIAL LATERAL OVERGROWTH OF GAAS BY LPE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1988, 27 (06): : L964 - L967
- [8] Epitaxial lateral overgrowth of GaAs by LPE [J]. Japanese Journal of Applied Physics, Part 2: Letters, 1988, 27 pt 2 (06):
- [10] Epitaxial lateral overgrowth of wide dislocation-free GaAs on Si substrates [J]. PROCEEDINGS OF THE TWENTY-SEVENTH STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS XXVII), 1997, 97 (21): : 196 - 200