Cross-sectional scanning tunneling spectroscopy of cleaved, silicon-based metal-oxide-semiconductor junctions

被引：0
|
作者：
Univ of Pennsylvania, Philadelphia, United States [1 ]
机构：
来源：
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | 1996年 / 14卷 / 03期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：1607 / 1610
相关论文
共 50 条
  • [1] Cross-sectional scanning tunneling spectroscopy of cleaved, silicon-based metal-oxide-semiconductor junctions
    Thibado, PM
    Mercer, TW
    Fu, S
    Egami, T
    DiNardo, NJ
    Bonnell, DA
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (03): : 1607 - 1610
  • [2] Tunneling spectroscopy of the silicon metal-oxide-semiconductor system
    Lye, WK
    Ma, TP
    Barker, RC
    Hasegawa, E
    Hu, Y
    Kuehne, J
    Frystak, D
    CHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY, 1998, 449 : 261 - 265
  • [3] SCANNING TUNNELING SPECTROSCOPY ON CLEAVED SILICON PN-JUNCTIONS
    KORDIC, S
    VANLOENEN, EJ
    DIJKKAMP, D
    HOEVEN, AJ
    MORAAL, HK
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (01): : 549 - 552
  • [4] Quantitative inelastic tunneling spectroscopy in the silicon metal-oxide-semiconductor system
    Lye, WK
    Hasegawa, E
    Ma, TP
    Barker, RC
    Hu, Y
    Kuehne, J
    Frystak, D
    APPLIED PHYSICS LETTERS, 1997, 71 (17) : 2523 - 2525
  • [5] Evaluation of device configurations through cross-sectional planes along gates of 0.1 μm metal-oxide-semiconductor field-effect transistors by scanning tunneling microscopy/scanning tunneling spectroscopy
    Hasegawa, Shigehiko
    Doi, Wataru
    Yabuucht, Atsushi
    Asahi, Hajime
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2006, 45 (3 B): : 2033 - 2036
  • [6] Evaluation of device configurations through cross-sectional planes along gates of 0.1 μm metal-oxide-semiconductor field-effect transistors by scanning tunneling microscopy/scanning tunneling spectroscopy
    Hasegawa, S
    Doi, W
    Yabuucfii, A
    Asahi, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (3B): : 2033 - 2036
  • [7] Cross-Sectional Scanning Tunneling Microscopy of Semiconductor Heterostructures
    Edward T. Yu
    MRS Bulletin, 1997, 22 : 22 - 26
  • [8] Cross-sectional scanning tunneling microscopy of semiconductor heterostructures
    Yu, ET
    MRS BULLETIN, 1997, 22 (08) : 22 - 26
  • [9] Aluminum, oxide, and silicon phonons by inelastic electron tunneling spectroscopy on metal-oxide-semiconductor tunnel junctions: Accurate determination and effect of electrical stress
    Petit, C
    Salace, G
    Vuillaume, D
    JOURNAL OF APPLIED PHYSICS, 2004, 96 (09) : 5042 - 5049
  • [10] Perspectives of cross-sectional scanning tunneling microscopy and spectroscopy for complex oxide physics
    Wang, Aaron
    Chien, TeYu
    PHYSICS LETTERS A, 2018, 382 (11) : 739 - 748
12345