EFFECT OF AN ELECTRIC FIELD ON CARRIER CAPTURE BY ATTRACTIVE CENTERS.

An experimental study was made of the effect of an electric field on carrier capture by attractive Coulomb centers in boron- doped silicon. A simple model is proposed in which the capture process is considered as the localization of a carrier in the Coulomb potential well around a center within a capture orbit from which thermal reemission is small. An electric field reduces the size of the capture orbit, increases the effective density of free states compared to the density of bound states, and raises the probability of kinetic energy relaxation when a carrier transfers to a capture orbit.