ENSEMBLE MONTE CARLO SIMULATION OF REAL SPACE TRANSFER (NERFET/CHINT) DEVICES.

被引：0

作者：

Kizilyalli, Isik C. ^{[1
]}

Hess, K. ^{[1
]}

Higman, T. ^{[1
]}

Emanuel, M. ^{[1
]}

Coleman, J.J. ^{[1
]}

机构：

[1] Univ of Illinois, Urbana, IL, USA, Univ of Illinois, Urbana, IL, USA

来源：

Solid-State Electronics | 1987年 / 31卷 / 3-4期

关键词：

MATHEMATICAL STATISTICS - Monte Carlo Methods - SEMICONDUCTOR MATERIALS;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A self-consistent particle-field ensemble Monte Carlo model for real space transfer (NERFET/CHINT) devices is presented. The simulations performed are in agreement with experiments and reproduce all prominent features of NERFET/CHINT structures such as, negative differential resistance, saturation of drain and substrate (injection) current at high source-to-drain voltages, and the negative transconductance ( DELTA I//D,//s//a//t/ DELTA V//s//u//b less than 0) in the saturated drain current. This paper presents our Monte Carlo model for the real space transfer transistors (NERFET/CHINT) and summarizes our simulations which are in agreement with experiments.

引用

页码：355 / 357

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