ENSEMBLE MONTE CARLO SIMULATION OF REAL SPACE TRANSFER (NERFET/CHINT) DEVICES.

被引：0
|
作者：
Kizilyalli, Isik C. [1 ]
Hess, K. [1 ]
Higman, T. [1 ]
Emanuel, M. [1 ]
Coleman, J.J. [1 ]
机构：
[1] Univ of Illinois, Urbana, IL, USA, Univ of Illinois, Urbana, IL, USA
来源：
Solid-State Electronics | 1987年 / 31卷 / 3-4期
关键词：
MATHEMATICAL STATISTICS - Monte Carlo Methods - SEMICONDUCTOR MATERIALS;
D O I：
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中图分类号：
学科分类号：
摘要：
A self-consistent particle-field ensemble Monte Carlo model for real space transfer (NERFET/CHINT) devices is presented. The simulations performed are in agreement with experiments and reproduce all prominent features of NERFET/CHINT structures such as, negative differential resistance, saturation of drain and substrate (injection) current at high source-to-drain voltages, and the negative transconductance ( DELTA I//D,//s//a//t/ DELTA V//s//u//b less than 0) in the saturated drain current. This paper presents our Monte Carlo model for the real space transfer transistors (NERFET/CHINT) and summarizes our simulations which are in agreement with experiments.
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页码：355 / 357
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