TEMPERATURE DEPENDENCE OF Ac-PHOTOCONDUCTIVITY OF HgI2 CRYSTAL.

被引：0
|
作者：
Mahmud, Y.A. [1 ]
Wishah, K.A. [1 ]
Abdul-Gader, M.M. [1 ]
Al-Haj Abdallah, M. [1 ]
Ahmad-Bitar, R.N. [1 ]
机构：
[1] Univ of Jordan, Amman, Jordan, Univ of Jordan, Amman, Jordan
来源：
Applied Physics A: Solids and Surfaces | 1987年 / A42卷 / 02期
关键词：
ELECTRIC MEASUREMENTS - Impedance;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
An ac impedance method has been used to study the electrical properties of an illuminated HgI//2 crystal as a function of temperature left bracket 10-350 K right bracket and frequency left bracket 1-10**4 Hz right bracket . The complex impedance plane plots enabled us to determine the bulk resistance of the crystal as a function of temperature. Activation energies of left bracket 0. 08 plus or minus 0. 005 ev right bracket and left bracket 0. 25 plus or minus 0. 01 ev right bracket are then found; they are attributed to acceptor and donor trapping levels, respectively. At temperatures lower than 230 K, a weak temperature dependence of the bulk resistance is observed. This weak dependence is supposed to be due to photoconductivity. This study is relevant to the potential of HgI//2 as a radiation detector.
引用
收藏
页码：129 / 131
相关论文
共 50 条
  • [21] LOW-TEMPERATURE PHOTO-LUMINESCENCE OF HGI2
    WU, ZL
    MERZ, JL
    VANDENBERG, L
    SCHNEPPLE, WF
    JOURNAL OF LUMINESCENCE, 1981, 24-5 (NOV) : 197 - 200
  • [22] EFFECT OF HGI2 CRYSTAL NONUNIFORMITIES ON GAMMA-RAY RESPONSE
    JAMES, K
    GERRISH, V
    CROSS, E
    MARKAKIS, J
    MARSCHALL, J
    MILSTEIN, F
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1992, 322 (03): : 390 - 401
  • [23] THERMAL-RADIATION AND LOW-TEMPERATURE-VAPOR GROWTH OF HGI2 CRYSTAL IN PRODUCTION FURNACE
    ROUX, A
    FEDOSEYEV, A
    ROUX, B
    JOURNAL OF CRYSTAL GROWTH, 1993, 130 (3-4) : 523 - 532
  • [24] Crystal Growth of α-HgI2 by the Temperature Difference Method for High Sensitivity X-ray Detection
    Zhang, Zhaojun
    Zheng, Wei
    Chen, Anqi
    Ding, Kai
    Huang, Feng
    CRYSTAL GROWTH & DESIGN, 2015, 15 (07) : 3383 - 3387
  • [25] Growth of α-HgI2 Crystal in HgI2-HI-H2O Solution by Applying Electric Field
    Xu Gang
    Zhang Gai
    Yang Cong-Xiao
    Chen Jing
    Hou Yan-Nan
    Li Jun-Ying
    Gu Zhi
    CHINESE JOURNAL OF INORGANIC CHEMISTRY, 2019, 35 (05) : 871 - 875
  • [26] EXCITATION SPECTROSCOPY, RAMAN-SCATTERING AND THE TEMPERATURE-DEPENDENCE OF THE LUMINESCENCE IN HIGHLY EXCITED RED HGI2
    KURTZE, G
    KLINGSHIRN, C
    HONERLAGE, B
    TOMZIG, E
    SCHOLZ, H
    JOURNAL OF LUMINESCENCE, 1979, 20 (02) : 151 - 161
  • [27] TEMPERATURE DEPENDENCE OF THE SPECIFIC HEAT OF THE CsDy(MoO4)2 CRYSTAL.
    Anders, E.E.
    Zvyagin, A.I.
    Shestachenko, L.S.
    Ferroelectrics, 1982, 48 (1 /2/3) : 93 - 95
  • [28] CRYSTAL-STRUCTURE AND VIBRATIONAL-SPECTRA OF (TEPH2)HGI2
    EINSTEIN, FWB
    JONES, CHW
    JONES, T
    SHARMA, RD
    INORGANIC CHEMISTRY, 1983, 22 (26) : 3924 - 3928
  • [29] HGI2 CRYSTAL-GROWTH - IMLI1 SPATIAL EXPERIMENT
    CADORET, R
    COUPAT, B
    BADAUD, JP
    FOURNIER, JP
    BELLEMKHANNATE, Z
    ERRAJI, S
    LAHKIM, A
    MAGNAN, A
    DELAY, G
    TESTANIERE, S
    VACQUIER, G
    ANNALES DE CHIMIE-SCIENCE DES MATERIAUX, 1990, 15 (7-8): : 481 - 484
  • [30] Strong SHG responses predicted in binary metal halide crystal HgI2
    Shi, Xuemei
    Ma, Zuju
    He, Chao
    Wu, Kechen
    CHEMICAL PHYSICS LETTERS, 2014, 608 : 219 - 223
12345