Excitonic properties of strained wurtzite and zinc-blende GaN/Al xGa1-xN quantum dots

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机构：
[1] Fonoberov, Vladimir A.
[2] Balandin, Alexander A.
来源：
Fonoberov, V.A. (vladimir@ee.ucr.edu) | 1600年 / American Institute of Physics Inc.卷 / 94期
关键词：
Aluminum nitride - Crystal growth - Crystal structure - Electric fields - Energy gap - Finite difference method - Finite element method - Gallium nitride - Ground state - Light emitting diodes - Matrix algebra - Molecular beam epitaxy - Optoelectronic devices - Permittivity - Piezoelectricity - Potential energy;
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摘要：
The exciton states of strained gallium nitride (GaN)/aluminum nitride (AlN) quantum dots with wurtzite (WZ) and zinc-blende (ZB) crystal structures were analyzed. The strain field significantly modified the conduction- and valance-band edges of GaN quantum dots. The radiative decay time in ZB GaN/AlN quantum dots was of the order of 0.3 ns. It was found that in WZ GaN/AlGaN quantum dots, both the radiative decay time and its increase with quantum-dot height were smaller than those in WZ GaN/AlN quantum dots.
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