Growth and electrical properties of atomic-layer deposited ZrO 2/Si-nitride stack gate dielectrics

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作者：
机构：
[1] Ishii, Hiroyuki
[2] Nakajima, Anri
[3] Yokoyama, Shin
来源：
Nakajima, A. (nakajima@sxsys.hiroshima-u.ac.jp) | 1600年 / American Institute of Physics Inc.卷 / 95期
关键词：
Capacitors - Current density - Dielectric materials - Electric properties - Leakage currents - Low temperature effects - MOSFET devices - Silicon - Silicon nitride - Vapor pressure - Zirconium compounds;
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摘要：
The deposition of ZrO2 thin films by atomic-layer deposition (ALD) was discussed. It was found that the deposited ZrO2 film thickness had self-limiting properties with the exposure time of ZTB and vapor pressures of ZTB and H2O. It was observed that the formation of SiOx interfacial layer was suppressed by using an ALD ZrO 2/ALD Si-nitride stack structure. The current conduction mechanism was found to be identified as direct tunneling of electron except a very low dielectric fields.
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