Growth and electrical properties of atomic-layer deposited ZrO 2/Si-nitride stack gate dielectrics

被引：0
|
作者：
机构：
[1] Ishii, Hiroyuki
[2] Nakajima, Anri
[3] Yokoyama, Shin
来源：
Nakajima, A. (nakajima@sxsys.hiroshima-u.ac.jp) | 1600年 / American Institute of Physics Inc.卷 / 95期
关键词：
Capacitors - Current density - Dielectric materials - Electric properties - Leakage currents - Low temperature effects - MOSFET devices - Silicon - Silicon nitride - Vapor pressure - Zirconium compounds;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The deposition of ZrO2 thin films by atomic-layer deposition (ALD) was discussed. It was found that the deposited ZrO2 film thickness had self-limiting properties with the exposure time of ZTB and vapor pressures of ZTB and H2O. It was observed that the formation of SiOx interfacial layer was suppressed by using an ALD ZrO 2/ALD Si-nitride stack structure. The current conduction mechanism was found to be identified as direct tunneling of electron except a very low dielectric fields.
引用
收藏
相关论文
共 50 条
  • [1] Growth and electrical properties of atomic-layer deposited ZrO2/Si-nitride stack gate dielectrics
    Ishii, H
    Nakajima, A
    Yokoyama, S
    JOURNAL OF APPLIED PHYSICS, 2004, 95 (02) : 536 - 542
  • [2] Carrier mobility in p-MOSFET with atomic-layer-deposited Si-nitride/SiO2 stack gate dielectrics
    Nakajima, A
    Khosru, QDM
    Kasai, T
    Yokoyama, S
    IEEE ELECTRON DEVICE LETTERS, 2003, 24 (07) : 472 - 474
  • [3] Atomic-layer-deposited ultrathin Si-nitride gate dielectrics - A better choice for sub-tunneling gate dielectrics
    Nakajima, A
    Ishii, H
    Kitade, T
    Yokoyama, S
    2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, 2003, : 657 - 660
  • [4] Ultrathin NH3 annealed atomic layer deposited Si-nitride/SiO2 stack gate dielectrics with high reliability
    Khosru, QDM
    Nakajima, A
    Yoshimoto, T
    Yokoyama, S
    2001 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, PROCEEDINGS, 2001, : 26 - 29
  • [5] Atomic layer-deposited Si-nitride/SiO2 stack gate dielectrics for future high-speed DRAM with enhanced reliability
    Nakajima, A
    Ohashi, T
    Zhu, SY
    Yokoyama, S
    Michimata, S
    Miyake, H
    IEEE ELECTRON DEVICE LETTERS, 2005, 26 (08) : 538 - 540
  • [6] High quality atomic-layer-deposited ultrathin Si-nitride gate dielectrics with low density of interface and bulk traps
    Nakajima, A
    Khosru, QDM
    Yoshimoto, T
    Kasai, T
    Yokoyama, S
    APPLIED PHYSICS LETTERS, 2003, 83 (02) : 335 - 337
  • [7] Low thermal-budget ultrathin NH3-annealed atomic-layer-deposited Si-nitride/SiO2 stack gate dielectrics with excellent reliability
    Khosru, QDM
    Nakajima, A
    Yoshimoto, T
    Yokoyama, S
    IEEE ELECTRON DEVICE LETTERS, 2002, 23 (04) : 179 - 181
  • [8] Atomic-layer deposition of ZrO2 with a Si nitride barrier layer
    Nakajima, A
    Kidera, T
    Ishii, H
    Yokoyama, S
    APPLIED PHYSICS LETTERS, 2002, 81 (15) : 2824 - 2826
  • [9] Bias temperature instability in metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Si-nitride/SiO2 stack gate dielectrics
    Zhu, Shiyang
    Nakajima, Anri
    JOURNAL OF APPLIED PHYSICS, 2008, 103 (08)
  • [10] Carrier mobility in metal-oxide-semiconductor field effect transistor with atomic-layer-deposited Si-nitride gate dielectrics
    Nakajima, A
    Ishii, H
    Yokoyama, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (28-32): : L903 - L905
12345