Quantitative analysis of Si in AlxGa1-xAs using quadrupole-based SIMS instrument

被引：0
|
作者：
Jiang, Zhixiong [1 ]
Zha, Lianghen [1 ]
Wang, Youxiang [1 ]
Chen, Chunhua [1 ]
Chen, Xin [1 ]
机构：
[1] Tsinghua Univ, Beijing, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 1996年 / 17卷 / 06期
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摘要：
(Edited Abstract)
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页码：421 / 427
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