Metastable states of Si donors in AlxGa1-xAs

被引：0
|
作者：
机构：
来源：
J Appl Phys | / 8卷 / 4395期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] Metastable states of Si donors in AlxGa1-xAs
    Jia, YB
    Grimmeiss, HG
    JOURNAL OF APPLIED PHYSICS, 1996, 80 (08) : 4395 - 4399
  • [2] A bistable behavior of the Si and Se donors in AlxGa1-xAs
    Biernacki, SW
    SOLID STATE COMMUNICATIONS, 1996, 98 (10) : 863 - 868
  • [3] Identification of Si donor states in AlxGa1-xAs by photoluminescence
    1600, (72):
  • [4] THE IDENTIFICATION OF SI DONOR STATES IN ALXGA1-XAS BY PHOTOLUMINESCENCE
    KANG, JY
    HUANG, QS
    JOURNAL OF APPLIED PHYSICS, 1992, 72 (04) : 1395 - 1398
  • [5] OPTICALLY DETECTED MAGNETIC-RESONANCE OF SI DONORS IN ALXGA1-XAS
    MONTIE, EA
    HENNING, JCM
    COSMAN, EC
    PHYSICAL REVIEW B, 1990, 42 (18): : 11808 - 11817
  • [6] METASTABLE DEFECTS IN BE-DOPED ALXGA1-XAS
    MAGNO, R
    SHELBY, R
    KENNEDY, TA
    SPENCER, MG
    JOURNAL OF APPLIED PHYSICS, 1989, 65 (12) : 4828 - 4831
  • [7] Photoexcited states of DX centers in Si doped AlxGa1-xAs
    Jia, YB
    Grimmeiss, HG
    JOURNAL OF APPLIED PHYSICS, 1996, 80 (06) : 3493 - 3503
  • [8] Metastable states observed by optical absorption of DX centers in AlxGa1-xAs:Te
    Mori, Yuzo
    Yokota, Takashi
    Ohkura, Hiroshi
    Japanese Journal of Applied Physics, Part 2: Letters, 1992, 31 (8 A):
  • [9] ELECTRONIC DENSITY OF STATES OF ALXGA1-XAS
    LI, ZQ
    POTZ, W
    PHYSICAL REVIEW B, 1991, 43 (15): : 12670 - 12672
  • [10] Statistical analysis in the negative-U model of donors in AlxGa1-xAs:Si
    Rziga-Ouaja, F
    Mejri, H
    Triki, A
    Selmi, A
    Rebey, A
    JOURNAL OF APPLIED PHYSICS, 2000, 88 (05) : 2583 - 2587
12345