Growth and characterization of Ga2Se3/GaAs(1 0 0) epitaxial thin films

被引：0
|
作者：
Ueno, K. [1 ]
Kawayama, M. [1 ]
Dai, Z.R. [2 ]
Koma, A. [1 ]
Ohuchi, F.S. [2 ]
机构：
[1] Department of Chemistry, Univ. Tokyo, 7-3-1 Hongo, B., Tokyo, Japan
[2] Dept. of Mat. Sci. and Engineering, 311 Roberts Hall, University of Washington, Box 352120, Seattle, WA 98105-2120, United States
来源：
Journal of Crystal Growth | 1999年 / 207卷 / 01期
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页码：69 / 76
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