Fabrication of quantum wires by Ga focused-ion-beam implantation and their transport properties

被引：0
|
作者：
Nakata, Syunji [1 ]
Yamada, Syoji [1 ]
Hirayama, Yoshiro [1 ]
Saku, Tadashi [1 ]
Horikoshi, Yoshiji [1 ]
机构：
[1] NTT Basic Research Lab, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1990年 / 29卷 / 01期
关键词：
Semiconducting Gallium Arsenide;
D O I：
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中图分类号：
学科分类号：
摘要：
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页码：48 / 52
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