Mid-infrared (3.3-3.9 μm) lasers and light-emitting diodes with type-II 'W' InAs(P,Sb)/InAsSb active regions

被引：0
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作者：
Stein, A. [1 ]
Behres, A. [1 ]
Kluth, J. [1 ]
Heime, K. [1 ]
Christol, P. [1 ]
Skouri, E.M. [1 ]
Wilk, A. [1 ]
Joullie, A. [1 ]
机构：
[1] RWTH Aachen, Aachen, Germany
来源：
Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest | 2000年
关键词：
Current density - Electroluminescence - Heterojunctions - Leakage currents - Light emitting diodes - Metallorganic vapor phase epitaxy - Semiconducting indium compounds - Semiconductor quantum wells - Spontaneous emission;
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学科分类号：
摘要：
InAsPSb/InAsSb/InAsP multiquantum weight-light-emitting diodes (MQW-LEDs) and lasers with type-II 'W' designed and with the highest emission intensities at 3.3-3.9-μm wavelength were fabricated. The resultant structures were characterized in detail.
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