Characterization of 3C-SiC epitaxial layers on TiC(111) by Raman scattering

被引：0
|
作者：
Harima, Hiroshi [1 ]
Nakashima, Shin-ichi [1 ]
Carulli, John M. [1 ]
Beetz Jr., Charles P. [1 ]
Yoo, Woo S. [1 ]
机构：
[1] Osaka Univ, Osaka, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1997年 / 36卷 / 9 A期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：5525 / 5531
相关论文
共 50 条
  • [41] Strain relaxation at the 3C-SiC/Si interface: Raman scattering experiments
    Falkovsky, LA
    Bluet, JM
    Camassel, J
    PHYSICAL REVIEW B, 1998, 57 (18) : 11283 - 11294
  • [42] RAMAN-SCATTERING OF SIC - ESTIMATION OF THE INTERNAL-STRESS IN 3C-SIC ON SI
    MUKAIDA, H
    OKUMURA, H
    LEE, JH
    DAIMON, H
    SAKUMA, E
    MISAWA, S
    ENDO, K
    YOSHIDA, S
    JOURNAL OF APPLIED PHYSICS, 1987, 62 (01) : 254 - 257
  • [43] Elimination of double position domains (DPDs) in epitaxial ⟨111⟩-3C-SiC on Si(111) by laser CVD
    Xu, Qingfang
    Zhu, Peipei
    Sun, Qingyun
    Tu, Rong
    Yang, Meijun
    Zhang, Song
    Zhang, Lianmeng
    Goto, Takashi
    Yan, Jiasheng
    Li, Shusen
    APPLIED SURFACE SCIENCE, 2017, 426 : 662 - 666
  • [44] Studies of Defect Structure in Epitaxial AlN/GaN Films Grown on (111) 3C-SiC
    Serban, Andreea Bianca
    Ene, Vladimir Lucian
    Dinescu, Doru
    Zai, Iulia
    Djourelov, Nikolay
    Vasile, Bogdan Stefan
    Leca, Victor
    NANOMATERIALS, 2021, 11 (05)
  • [45] Hetero-epitaxial growth of 3C-SiC on Si(111) by plasma assisted CVD
    Shimizu, Hideki
    Kato, Akira
    SILICON CARBIDE AND RELATED MATERIALS 2006, 2007, 556-557 : 183 - +
  • [46] LOW-TEMPERATURE EPITAXIAL-GROWTH OF 3C-SIC ON (111) SILICON SUBSTRATES
    HIRABAYASHI, Y
    KOBAYASHI, K
    KARASAWA, S
    JOURNAL OF CRYSTAL GROWTH, 1990, 99 (1-4) : 284 - 286
  • [47] Quasi free-standing epitaxial graphene fabrication on 3C-SiC/Si(111)
    Amjadipour, Mojtaba
    Tadich, Anton
    Boeckl, John J.
    Lipton-Duffin, Josh
    MacLeod, Jennifer
    Iacopi, Francesca
    Motta, Nunzio
    NANOTECHNOLOGY, 2018, 29 (14)
  • [48] Epitaxial Graphene on Si(111) Substrate Grown by Annealing 3C-SiC/Carbonized Silicon
    Aryal, Hare Ram
    Fujita, Kazuhisa
    Banno, Kazuya
    Egawa, Takashi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (01)
  • [49] Characterization of GaN thin film growth on 3C-SiC/Si(111) substrate using various buffer layers
    Park, CI
    Kang, JH
    Kim, KC
    Suh, EK
    Lim, KY
    Nahm, KS
    JOURNAL OF CRYSTAL GROWTH, 2001, 224 (3-4) : 190 - 194
  • [50] Chloride-based CVD of 3C-SiC epitaxial layers on 6H(0001) SiC
    Leone, Stefano
    Beyer, Franziska C.
    Henry, Anne
    Kordina, Olof
    Janzen, Erik
    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2010, 4 (11): : 305 - 307
12345