Molecular beam epitaxial growth of GaN on (0001) Al2O3 using an ultrathin amorphous buffer layer deposited at low temperature

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作者：
Teikyo Univ of Science and, Technology, Yamanashi, Japan [1 ]
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来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2000年 / 39卷 / 3 A期
关键词：
Gallium nitride - Initial nucleation - Ultrathin amorphous buffer layer - X ray rocking curves;
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页码：1039 / 1043
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