Direct observation of the LO phonon bottleneck in wide GaAs/AlxGa1-xAs quantum wells

被引：0
|
作者：
机构：
来源：
Phys Rev B | / 8卷 / 5171期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
下载
收藏
相关论文
共 50 条
  • [21] Exciton formation rates in GaAs/AlxGa1-xAs quantum wells
    Piermarocchi, C
    Tassone, F
    Savona, V
    Quattropani, A
    Schwendimann, P
    PHYSICAL REVIEW B, 1997, 55 (03): : 1333 - 1336
  • [22] Structure effects on electron-optical phonon interaction in GaAs/AlxGa1-xAs quantum wells
    Lee, HC
    Sun, KW
    Lee, CP
    JOURNAL OF APPLIED PHYSICS, 2002, 92 (01) : 268 - 273
  • [23] ELECTRON-LO-PHONON SCATTERING RATES IN GAAS-ALXGA1-XAS QUANTUM-WELLS
    WEBER, G
    DEPAULA, AM
    RYAN, JF
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (05) : 397 - 400
  • [24] REMOTELY-DOPED SUPERLATTICES IN WIDE PARABOLIC GAAS/ALXGA1-XAS QUANTUM-WELLS
    BASKEY, JH
    RIMBERG, AJ
    YANG, S
    WESTERVELT, RM
    HOPKINS, PF
    GOSSARD, AC
    APPLIED PHYSICS LETTERS, 1992, 61 (13) : 1573 - 1575
  • [25] CHARACTERIZATION OF THE ELECTRON-GAS IN WIDE PARABOLIC GAAS/ALXGA1-XAS QUANTUM-WELLS
    GWINN, EG
    HOPKINS, PF
    RIMBERG, AJ
    WESTERVELT, RM
    SUNDARAM, M
    GOSSARD, AC
    PHYSICAL REVIEW B, 1990, 41 (15): : 10700 - 10705
  • [26] A PHOTOCURRENT SPECTROSCOPY STUDY OF GAAS/ALXGA1-XAS QUANTUM-WELLS
    COLLINS, RT
    PLOOG, K
    VONKLITZING, K
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04): : 986 - 987
  • [27] Excitons bound at interacting acceptors in AlxGa1-xAs/GaAs quantum wells
    Ferreira, AC
    Holtz, PO
    Monemar, B
    Sundaram, M
    Campman, K
    Merz, JL
    Gossard, AC
    PHYSICAL REVIEW B, 1996, 54 (23): : 16994 - 16997
  • [28] Excitons bound at interacting acceptors in AlxGa1-xAs/GaAs quantum wells
    Phys Rev B, 23 (16994):
  • [29] Exciton pattern generation in GaAs/AlxGa1-xAs multiple quantum wells
    Fluegel, B.
    Alberi, K.
    Bhusal, L.
    Mascarenhas, A.
    Snoke, D. W.
    Karunasiri, G.
    Pfeiffer, L. N.
    West, K.
    PHYSICAL REVIEW B, 2011, 83 (19)
  • [30] Intrasubband and intersubband transitions in GaAs/AlxGa1-xAs multiple quantum wells
    Li, J. M.
    Qian, K. Y.
    Zhu, Q. S.
    Wang, Z. G.
    APPLIED PHYSICS LETTERS, 2007, 90 (16)
12345