Determination of precursor conversion in a multiwafer hot-wall chemical vapor deposition (CVD) reactor

被引:0
|
作者
Tesfaghiorghis, Yemane [1 ]
Loney, Norman W. [1 ]
机构
[1] New Jersey Inst of Technology, Newark, United States
来源
关键词
D O I
暂无
中图分类号
学科分类号
摘要
5
引用
收藏
页码:415 / 417
相关论文
共 50 条
  • [21] SiC and ill-nitride growth in a hot-wall CVD reactor
    Janzén, E
    Bergman, JP
    Danielsson, Ö
    Forsberg, U
    Hallin, C
    Ul Hassan, J
    Henry, A
    Ivanov, IG
    Kakanakova-Georgieva, A
    Persson, P
    ul Wahab, Q
    SILICON CARBIDE AND RELATED MATERIALS 2004, 2005, 483 : 61 - 66
  • [22] Numerical Simulation of Gas Phase Reaction for Epitaxial Chemical Vapor Deposition of Silicon Carbide by Methyltrichlorosilane in Horizontal Hot-Wall Reactor
    Song, Botao
    Gao, Bing
    Han, Pengfei
    Yu, Yue
    Tang, Xia
    MATERIALS, 2021, 14 (24)
  • [23] HOT-WALL CVD TUNGSTEN FOR VLSI
    MILLER, NE
    BEINGLASS, I
    SOLID STATE TECHNOLOGY, 1980, 23 (12) : 79 - 82
  • [24] LPCVD OF SIC LAYERS IN A HOT-WALL REACTOR USING TMS PRECURSOR
    HENRY, F
    MARTI, P
    CASAUX, Y
    COMBESCURE, C
    FIGUERAS, A
    MADIGOU, V
    RODRIGUEZ-CLEMENTE, R
    MAZEL, A
    SEVELY, J
    ARMAS, B
    JOURNAL DE PHYSIQUE IV, 1993, 3 (C3): : 329 - 336
  • [25] Simulation of SiC deposition in a hot wall CVD reactor
    Jia, Wei
    Zhang, Yuming
    Zhang, Yimen
    Jia, Renxu
    Guo, Hui
    THIN FILM PHYSICS AND APPLICATIONS, SIXTH INTERNATIONAL CONFERENCE, 2008, 6984
  • [26] Reduced order modelling for efficient numerical optimisation of a hot-wall chemical vapour deposition reactor
    Borzacchiello, Domenico
    Aguado, Jose Vicente
    Chinesta, Francisco
    INTERNATIONAL JOURNAL OF NUMERICAL METHODS FOR HEAT & FLUID FLOW, 2017, 27 (07) : 1602 - 1622
  • [27] Thermal modeling of tubular horizontal hot-wall low pressure chemical vapor deposition reactors
    Azzaro, C., 1600, Elsevier Science S.A., Lausanne, Switzerland (57):
  • [28] Hot-wall low pressure chemical vapor deposition growth and characterization of AlN thin films
    Heinselman, Karen N.
    Brown, Richard J.
    Shealy, James R.
    JOURNAL OF CRYSTAL GROWTH, 2017, 475 : 286 - 290
  • [30] Predicting growth rates of SiC epitaxial layers grown by hot-wall chemical vapor deposition
    Danielsson, Ö
    Jönsson, S
    Henry, A
    Janzén, E
    SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 219 - 222