Determination of precursor conversion in a multiwafer hot-wall chemical vapor deposition (CVD) reactor

被引:0
|
作者
Tesfaghiorghis, Yemane [1 ]
Loney, Norman W. [1 ]
机构
[1] New Jersey Inst of Technology, Newark, United States
来源
关键词
D O I
暂无
中图分类号
学科分类号
摘要
5
引用
收藏
页码:415 / 417
相关论文
共 50 条
  • [1] Iridium coatings grown by metal-organic chemical vapor deposition in a hot-wall CVD reactor
    Maury, F
    Senocq, F
    SURFACE & COATINGS TECHNOLOGY, 2003, 163 : 208 - 213
  • [2] Investigation of the temperature profile in a hot-wall SiC chemical vapor deposition reactor
    Danielsson, Ö
    Forsberg, U
    Henry, A
    Janzén, E
    JOURNAL OF CRYSTAL GROWTH, 2002, 235 (1-4) : 352 - 364
  • [3] Effects of wall temperature and seed particle on particle growth and deposition in a hot-wall chemical vapor deposition reactor
    Lu, SY
    Lin, CH
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1999, 146 (11) : 4105 - 4110
  • [4] SIMULATION OF CHEMICAL-VAPOR-DEPOSITION OF SIC FROM METHYLTRICHLOROSILANE IN A HOT-WALL REACTOR
    NEUSCHUTZ, D
    SCHIERLING, M
    ZIMDAHL, S
    JOURNAL DE PHYSIQUE IV, 1995, 5 (C5): : 253 - 260
  • [5] A MODEL FOR LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION IN A HOT-WALL TUBULAR REACTOR
    HOUF, WG
    GRCAR, JF
    BREILAND, WG
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1993, 17 (1-3): : 163 - 171
  • [6] REACTION OF DIBORANE AND AMMONIA GAS-MIXTURES IN A CHEMICAL-VAPOR-DEPOSITION HOT-WALL REACTOR
    GOMEZALEIXANDRE, C
    DIAZ, D
    ORGAZ, F
    ALBELLA, JM
    JOURNAL OF PHYSICAL CHEMISTRY, 1993, 97 (42): : 11043 - 11046
  • [7] CHEMICAL VAPOR-DEPOSITION OF SILICON UNDER REDUCED PRESSURE IN A HOT-WALL REACTOR - EQUILIBRIUM AND KINETICS
    LANGLAIS, F
    HOTTIER, F
    CADORET, R
    JOURNAL OF CRYSTAL GROWTH, 1982, 56 (03) : 659 - 672
  • [8] Growth characteristics of SiC in a hot-wall CVD reactor with rotation
    Zhang, J.
    Forsberg, U.
    Isacson, M.
    Ellison, A.
    Henry, A.
    Kordina, O.
    Janzén, E.
    Materials Science Forum, 2002, 389-393 (01) : 191 - 194
  • [9] Growth characteristics of SiC in a hot-wall CVD reactor with rotation
    Zhang, J
    Forsberg, U
    Isacson, M
    Ellison, A
    Henry, A
    Kordina, O
    Janzén, E
    SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 191 - 194
  • [10] Growth characteristics of SiC in a hot-wall CVD reactor with rotation
    Zhang, J
    Forsberg, U
    Isacson, M
    Ellison, A
    Henry, A
    Kordina, O
    Janzén, E
    JOURNAL OF CRYSTAL GROWTH, 2002, 241 (04) : 431 - 438