X-ray standing wave analysis of GaAs/Si interface

被引：0

作者：

Kawamura, Tomoaki ^{[1
]}

Takenaka, Hisataka ^{[1
]}

Uneta, Makoto ^{[1
]}

Oshima, Masaharu ^{[1
]}

Fukuda, Yukio ^{[1
]}

Ohmachi, Yoshiro ^{[1
]}

Izumi, Koichi ^{[1
]}

Ishikawa, Tetsuya ^{[1
]}

Kikuta, Seishi ^{[1
]}

Zhang, Xiao Wei ^{[1
]}

机构：

[1] NTT Interdisciplinary Research Lab, Tokyo, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1993年 / 32卷 / 1 B期

关键词：

Semiconducting gallium arsenide;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：622 / 625

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