Formation of a 100-μm-wide stepfree GaAs (111)B surface obtained by finite area metallorganic vapor phase epitaxy

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作者：
Nishida, Toshio [1 ]
Kobayashi, Naoki [1 ]
机构：
[1] NTT Basic Research Lab, Kanagawa, Japan
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 1998年 / 37卷 / 1 A-B期
关键词：
Applications; (APP); -; Experimental; (EXP);
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摘要：
To perfectly flatten crystal facets, we propose a procedure that utilizes the balance between growth-material supply and desorption. By the suppression of two dimensional nucleation due to this desorption balance, stepfree facets can be obtained however large their area becomes, as long as their size is finite. We also confirm the validity of this assumption by obtaining a 100-μm-wide atomically stepfree surface on a GaAs (111)B substrate by metallorganic vapor phase epitaxy.
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