INVESTIGATION OF THE PHASE COMPOSITION OF SILICON OXIDES BY ELECTRON SPECTROSCOPY METHODS.

被引：0
|
作者：
Koval', I.F.
Kryn'ko, Yu.N.
Mel'nik, P.V.
Nakhodkin, N.G.
Goisa, S.N.
机构：
来源：
| 1977年 / 19卷 / 09期
关键词：
SILICON AND ALLOYS - Oxidation - SILICON COMPOUNDS - Thin Films - SPECTROSCOPY; AUGER ELECTRON - Applications;
D O I：
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学科分类号：
摘要：
Ionization losses and Anger spectroscopy were used to study the changes in the chemical structure as a result of oxidation and thermal cleaning of the (100) face of Si, and also the chemical structure and phase composition of vacuum-evaporated SiO//x films.
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页码：1570 / 1571
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