TRANSITIONAL CHARACTERISTICS OF InAs p-n JUNCTIONS IN A PHOTODIODE MODE.

被引：0
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作者：
Andrushko, A.I.
Slobodchikov, S.V.
Usachev, Ye.P.
Filaretova, G.M.
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来源：
Radio Engineering and Electronic Physics (English translation of Radiotekhnika i Elektronika) | 1972年 / 17卷 / 05期
关键词：
TRANSITIONAL CHARACTERISTICS;
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摘要：
In the present article, several results of investigating the transitional processes of p-n junctions of indium arsenide, one of the narrow-band compounds A**3B**5 with inverse shift are discussed. The conditions of relaxation of the output signal as a function of the parameters of the diode, load resistance, and voltage bias, are examined.
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页码：865 / 868
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