MICROANALYTICAL ESTIMATION OF BORON AND URANIUM IN SOME SEMICONDUCTORS USING SOLID STATE NUCLEAR TRACK DETECTORS.

被引:0
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作者
Dhawan, M.M. [1 ]
机构
[1] Kurukshetra Univ, Kurukshetra, India, Kurukshetra Univ, Kurukshetra, India
来源
Nuclear tracks | 1985年 / 12卷 / 1-6期
关键词
BORON - Measurements - URANIUM AND ALLOYS - Measurements;
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摘要
Boron is a universal dopant and has much significant and important role to play in semiconductors. Microestimation of boron is thus important for characterization of semiconductors. Uranium is a newly recognized trace element in semiconductors. Moderate traces of uranium or other fissionable impurities present may affect electrical parameters of semiconductors. In thermal neutron environment fission damage may render the semiconductors useless for the fabrication of devices. Thus uranium content information in the otherwise pure semiconductors may be significant. With the discovery of Solid State Nuclear Track Detectors an additional method namely Particle Track Analysis Technique is available for the estimation of Boron and Uranium concentration in semiconductors.
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页码:953 / 956
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