ELECTRON CHANNELING IN THE SCANNING ELECTRON MICROSCOPE FOR MONITORING THE THICKNESSES OF RESIDUAL OXIDE FILMS ON SEMICONDUCTOR SUBSTRATES.

被引：0
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作者：
Vinogradova, N.S. [1 ]
Nosikov, S.V. [1 ]
Sorokin, I.N. [1 ]
Sosnovskikh, Yu.N. [1 ]
机构：
[1] Moscow Electronic Engineering Inst, USSR, Moscow Electronic Engineering Inst, USSR
来源：
| 1600年 / 52期
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摘要：
MICROSCOPIC EXAMINATION
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