PRACTICAL ASPECTS OF SPUTTERING.

被引：0
|
作者：
Aronson, Arnold
机构：
来源：
Water Resources and Environmental Engineering Research Report (State University of New York at Buffalo, Department of Civil Engineering) | 1979年
关键词：
Compendex;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Vacuum technology
引用
收藏
相关论文
共 50 条
  • [41] Deposition and analysis of teflonlike thin films synthesized by RF sputtering.
    Sivaraman, R
    Clarson, SJ
    Sergienko, AY
    Silverstein, MS
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2000, 219 : U473 - U473
  • [42] KINETICS OF THE SURFACE CONCENTRATION OF COMPONENTS OF AN ALLOY DURING EVAPORATION AND SPUTTERING.
    Dekhtyar, M.I.
    Shalayev, A.M.
    Physics of Metals and Metallography, 1979, 47 (04): : 162 - 165
  • [43] CONCERNING THE PROBLEM OF HIGH DEPTH RESOLUTION USING ION SPUTTERING.
    Blaise, G.
    Scanning Electron Microscopy, 1986, (pt 1) : 129 - 137
  • [44] PREPARATION OF TRANSPARENT CONDUCTING ZINC OXIDE FILMS BY REACTIVE SPUTTERING.
    Vasanelli, L.
    Valentini, A.
    Losacco, A.
    Solar energy materials, 1986, 16 (1-3): : 91 - 102
  • [45] FIVE-LAYER STRUCTURE ELECTROLUMINESCENT DEVICES PREPARED BY RF SPUTTERING.
    Mikami, Akiyoshi
    Ando, Keiichi
    Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi), 1986, 69 (02): : 51 - 57
  • [46] Concerning the creation of metalsoles in organic dispersion agents through electronic sputtering.
    Borl, L
    Barth, K
    Winnacker, K
    ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE-ABTEILUNG A-CHEMISCHE THERMODYNAMIK KINETIK ELEKTROCHEMIE EIGENSCHAFTSLEHRE, 1929, 145 (3/4): : 298 - 302
  • [47] BORON DOPING OF AMORPHOUS HYDROGENATED SILICON FILMS PREPARED BY rf SPUTTERING.
    Jousse, D.
    Said, J.
    Bruyere, J.C.
    1600, (124):
  • [48] Growth Kinetics of Thin Zinc Oxide Films Prepared by Cold Sputtering.
    Saint Martin, B.Laville
    Meyer, B.
    Thin Films, 1972, 2 (02): : 139 - 151
  • [49] On the structure and the gas content of nickel layers, which are produced by cathodic sputtering.
    Buessem, Wilhelm
    Gross, Friedrich
    ZEITSCHRIFT FUR PHYSIK, 1933, 86 (1-2): : 135 - 136
  • [50] LAMINANT DISTRIBUTION OF HYDROGENATED BONDS IN AMORPHOUS SILICON DEPOSITED BY RF SPUTTERING.
    Lue, Juh Tzeng
    Shaw, Sen-Yen
    1600, (95):
12345