NOISE IN FINITE COMPENSATED SEMICONDUCTORS - 1. GENERATION-RECOMBINATION NOISE.

被引：0

|

作者：

Suris, R.A.

Fuks, B.I.

机构：

来源：

Soviet physics. Semiconductors | 1980年 / 14卷 / 06期

关键词：

Compendex;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

SEMICONDUCTOR MATERIALS

引用

收藏

页码：641 / 646

相关论文

共 50 条

[31] STUDY OF GENERATION-RECOMBINATION NOISE OF GUNN DIODES
DECACQUERAY, A
BLASQUEZ, G
GRAFFEUIL, J
SOLID-STATE ELECTRONICS, 1973, 16 (08) : 853 - 860
[32] GENERATION-RECOMBINATION NOISE PRODUCED IN CHANNEL OF JFETS
HIATT, CF
VANDERZIEL, A
VANVLIET, KM
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (08) : 614 - 616
[33] GENERATION-RECOMBINATION NOISE OF P-INSB
KANZAKI, K
MIYAO, W
JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (06) : 1113 - 1116
[34] GENERATION-RECOMBINATION NOISE IN EXTRINSIC PHOTOCONDUCTIVE DETECTORS
BRUKILACCHIO, TJ
SKELDON, MD
BOYD, RW
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 1984, 1 (03) : 354 - 360
[35] GENERATION-RECOMBINATION NOISE OF IMPATTS BIAS CURRENT
KORNILOV, SA
OVCHINNIKOV, KD
RIPAK, AM
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII RADIOFIZIKA, 1986, 29 (12): : 1462 - 1470
[36] CONTRIBUTION TO STUDY OF GENERATION-RECOMBINATION NOISE IN GERMANIUM
GOUSKOV
VALADJI, L
ANNALES DE PHYSIQUE, 1967, 2 (03) : 155 - +
[37] ON GENERATION-RECOMBINATION NOISE IN INFRARED DETECTOR MATERIALS
LONG, D
INFRARED PHYSICS, 1967, 7 (03): : 169 - &
[38] Monte Carlo analysis of the influence of dc conditions on the upconversion of generation-recombination noise in semiconductors
Pérez, S
González, T
Delage, SL
Obregon, J
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2001, 16 (02) : L8 - L11
[39] The transition from generation-recombination noise in bulk semiconductors to discrete switching in small-area semiconductors
Grueneis, Ferdinand
PHYSICA A-STATISTICAL MECHANICS AND ITS APPLICATIONS, 2021, 568
[40] NOISE IN FINITE COMPENSATED SEMICONDUCTORS .2. JOHNSON NOISE AND CONTACT NOISE
SURIS, RA
FUKS, BI
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (06): : 647 - 652

← 1 2 3 4 5 →